Infineon IPB180P04P4L-02: High-Performance OptiMOS Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, Infineon Technologies has engineered the IPB180P04P4L-02, a standout member of its OptiMOS™ Power MOSFET family, designed to set a new benchmark for performance in low-voltage applications.

This MOSFET is built upon Infineon’s advanced proprietary technology, offering an exceptional blend of low on-state resistance and high switching speed. With a remarkably low maximum RDS(on) of just 1.8 mΩ at 10 V, the device minimizes conduction losses, a critical factor for improving overall system efficiency. This is particularly vital in high-current applications such as server and telecom power supplies, where every milliohm counts towards reducing energy waste and operational heat.

Furthermore, the optimized gate charge (Qg) ensures swift and efficient switching transitions. This reduction in switching losses allows systems to operate at higher frequencies without a punitive efficiency drop, enabling designers to use smaller passive components like inductors and capacitors. The result is a significant leap in power density, allowing for more compact and lighter end-products without compromising on performance or thermal management.

The IPB180P04P4L-02 is housed in a robust PQFN 8x8 mm package (TOLL - Transistor Outline Leadless), which offers an excellent thermal footprint. This package design minimizes parasitic inductance, further enhancing switching performance, and provides a low thermal resistance path for effective heat dissipation away from the silicon die. This makes it an ideal candidate for space-constrained designs demanding high reliability, including industrial motor drives, solar inverters, and battery management systems (BMS).

In summary, this OptiMOS™ device delivers a powerful combination that is hard to match: ultra-low resistance, fast switching, and superior thermal performance in a modern, compact package.

ICGOODFIND: The Infineon IPB180P04P4L-02 exemplifies the innovation driving modern power electronics, providing engineers with a superior component to achieve unprecedented levels of efficiency and power density in their demanding designs.

Keywords: OptiMOS, Low RDS(on), High Efficiency, Power Density, TOLL Package.