Infineon BSS308PEH6327XTSA1 P-Channel MOSFET: Datasheet, Pinout, and Application Circuits
The Infineon BSS308PEH6327XTSA1 is a state-of-the-art P-Channel MOSFET housed in a compact SOT-23 (TO-236) package, designed to deliver high performance in a minimal footprint. Engineered using Infineon's advanced proprietary process technology, this MOSFET is optimized for low gate charge and low on-resistance, making it an ideal choice for power management applications where efficiency and space are critical constraints.
Key Datasheet Specifications and Features
A thorough review of the datasheet reveals the component's capabilities. The device boasts a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -3.7 A, enabling it to handle significant power levels. One of its most notable features is its exceptionally low on-resistance (RDS(on)) of just 38 mΩ (max. at VGS = -10 V), which directly translates to reduced conduction losses and higher overall system efficiency. Furthermore, it features a low gate threshold voltage (VGS(th)), typically around -1.35 V, allowing it to be driven effectively by low-voltage logic signals from microcontrollers or other ICs. This combination of high current handling and low resistance in a SOT-23 package makes it exceptionally power-dense.
Pinout Configuration
The pinout for the SOT-23 package is standard for a single MOSFET:
Pin 1 (Gate): This is the control pin. Applying a voltage relative to the source pin turns the MOSFET on or off.
Pin 2 (Source): This pin is typically connected to the power supply rail. For a P-Channel MOSFET used as a high-side switch, the source is connected to VCC.
Pin 3 (Drain): The output pin. The load is connected between the drain and ground.
Application Circuits
The BSS308PEH6327XTSA1 is versatile and can be deployed in numerous circuits:
1. Load Switching: Its primary application is as a high-side load switch. A microcontroller GPIO pin can directly control power to a peripheral (e.g., a sensor module, LED string, or motor) by driving the gate. A simple circuit involves the MOSFET's source connected to the power supply (e.g., 12V or 5V), the drain connected to the load, and the load connected to ground. The MCU pulls the gate to ground to turn the load ON and sets it to a high-impedance state (or to the source voltage) to turn it OFF. A pull-up resistor on the gate is often used to ensure proper turn-off.
2. Power Management in Portable Devices: Due to its small size and efficiency, it is perfect for battery-powered applications such as smartphones, tablets, and wearables. It can be used for power domain isolation, shutting down entire sections of a circuit when not in use to conserve battery life.
3. DC-DC Converters: This MOSFET can be employed in the power stages of certain DC-DC converter topologies, particularly where a P-Channel device is required for control logic simplicity.
4. Reverse Polarity Protection: A simple and effective reverse polarity protection circuit can be built using a P-Channel MOSFET. The MOSFET is placed in the positive rail. During correct polarity, the body diode is forward-biased, allowing the gate to be pulled low, turning the MOSFET fully on. If polarity is reversed, the body diode and the channel are reverse-biased, blocking current flow and protecting the downstream circuitry.
Design Considerations:
When implementing this MOSFET, designers should consider:
Gate Driving: While it can be driven by logic levels, ensuring a strong enough gate drive signal is crucial for fast switching and to avoid operating in the linear region, which causes excessive heat.
Flyback Protection: When switching inductive loads (like motors or solenoids), a flyback diode must be used across the load to protect the MOSFET from voltage spikes.
Heatsinking: Although efficient, at high currents the package will dissipate heat. PCB layout using large copper pours connected to the source pin is recommended to act as a heatsink.
ICGOOODFIND: The Infineon BSS308PEH6327XTSA1 stands out as a superior P-Channel MOSFET that masterfully balances low on-resistance, high current capability, and a miniature form factor. Its excellent electrical characteristics make it an indispensable component for designers aiming to maximize efficiency and reliability in space-constrained modern electronics, from portable gadgets to sophisticated power systems.
Keywords: P-Channel MOSFET, Load Switch, Low On-Resistance, Power Management, SOT-23.
