Infineon IPA65R280E6: Advanced 650V CoolMOS™ Power Transistor for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPA65R280E6 stands out as a premier 650V superjunction MOSFET, engineered to deliver exceptional performance in demanding applications. Leveraging Infineon's advanced CoolMOS™ E6 technology, this transistor sets a new benchmark for efficiency, reliability, and thermal management.

At the heart of its design is a significantly reduced figure-of-merit (Rds(on) x Qg), which is pivotal for minimizing both conduction and switching losses. This enables systems to operate at higher switching frequencies without sacrificing efficiency, a critical requirement for compact power supplies. The ultra-low on-state resistance (Rds(on) of just 280mΩ maximizes conductivity, leading to less energy wasted as heat and contributing to a cooler, more reliable system operation.

The IPA65R280E6 is particularly engineered for high-efficiency and high-frequency switching operations. It is an ideal solution for critical power conversion stages in:

Server & Telecom Power Supplies (PSUs)

Industrial SMPS (Switched-Mode Power Supplies)

Photovoltaic Inverters and Energy Storage Systems

Electric Vehicle Charging Infrastructure

Lighting (e.g., High-bay LED drivers)

A key feature of the CoolMOS™ E6 series is its integrated fast body diode, which enhances robustness during hard commutation and light-load conditions. This intrinsic diode offers excellent reverse recovery characteristics, reducing switching losses and electromagnetic interference (EMI), thereby simplifying circuit design and filtering requirements. Furthermore, the component exhibits superior avalanche ruggedness, ensuring unwavering reliability even under extreme voltage stress and unpredictable operating conditions, such as lightning strikes or inductive load switching.

The combination of low losses and a low thermal resistance package allows for outstanding thermal performance, enabling designers to push the limits of power density. This makes the IPA65R280E6 a cornerstone technology for creating smaller, lighter, and more efficient power systems that meet stringent global energy regulations.

ICGOOODFIND: The Infineon IPA65R280E6 exemplifies the evolution of high-voltage power switching, offering a perfect synergy of ultra-low losses, high robustness, and excellent thermal properties. It is a top-tier choice for engineers aiming to achieve peak efficiency and maximize power density in next-generation high-performance applications.

Keywords:

CoolMOS™ E6

High-Efficiency

Ultra-Low Rds(on)

Fast Body Diode

Avalanche Ruggedness