Infineon IPD50N04S3-08: High-Performance 40V Power MOSFET for Automotive and Industrial Applications

The demand for robust and efficient power management solutions continues to grow across the automotive and industrial sectors. In response, Infineon Technologies has developed the IPD50N04S3-08, a state-of-the-art 40V N-channel power MOSFET engineered to deliver exceptional performance, reliability, and efficiency in demanding environments.

This MOSFET is built using Infineon’s advanced OptiMOS™ power transistor technology, which is renowned for its low on-state resistance and superior switching characteristics. With a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 50A, the IPD50N04S3-08 is ideally suited for a wide range of high-current applications. Its standout feature is its remarkably low typical on-resistance (RDS(on)) of just 3.8 mΩ at 10V, which directly translates to reduced conduction losses and higher overall system efficiency. This makes it an excellent choice for power switching tasks such as motor control, solenoid driving, and high-efficiency DC-DC converters.

In the automotive realm, this component meets the rigorous AEC-Q101 qualification standard, ensuring it can withstand the harsh operating conditions found in vehicles. It is commonly deployed in applications like electric power steering (EPS), transmission control units, and advanced driver-assistance systems (ADAS), where reliability is non-negotiable. For industrial use, its robustness supports functions in power tools, forklifts, and other heavy machinery that require durable and efficient power switching.

The device is offered in a SuperSO8 package, which provides an excellent power-to-size ratio. This compact footprint allows for higher power density in modern electronic designs, making it easier for engineers to save valuable board space without compromising on thermal performance or current handling capability. The package is also designed for improved thermal characteristics, aiding in effective heat dissipation during operation.

Furthermore, the IPD50N04S3-08 boasts a low gate charge (Qg) and fast switching speeds, which are critical for minimizing switching losses in high-frequency applications. This contributes to cooler operation and can help simplify thermal management requirements in the end system.

ICGOODFIND: The Infineon IPD50N04S3-08 stands out as a highly efficient and reliable power MOSFET that addresses the critical needs of modern automotive and industrial systems. Its combination of ultra-low RDS(on), high current capability, and AEC-Q101 qualification makes it a superior choice for designers aiming to enhance performance and durability.

Keywords: OptiMOS™ Technology, Low RDS(on), AEC-Q101 Qualified, SuperSO8 Package, High Current Capability.