Infineon IRLZ24NSTRLPBF N-Channel Power MOSFET: Datasheet, Application Circuit, and Pinout Guide
The Infineon IRLZ24NSTRLPBF is a highly efficient N-Channel Power MOSFET that leverages advanced HEXFET technology to deliver exceptional performance in switching applications. Designed for low gate drive power loss and fast switching speeds, this component is a popular choice for power management tasks in a wide range of electronic devices.
Key Features from the Datasheet
The IRLZ24NSTRLPBF operates with a drain-to-source voltage (Vds) of 55V and a continuous drain current (Id) of 17A at 25°C, making it suitable for medium-power applications. Its standout feature is an exceptionally low on-state resistance (Rds(on)) of just 0.1Ω at a 10V gate drive, which minimizes conduction losses and improves overall system efficiency. The device is also characterized by its avalanche ruggedness and is fully characterized for use in repetitive avalanche scenarios, enhancing its reliability. Housed in a TO-262 package, it offers a compact footprint with good thermal performance.
Pinout Guide
The TO-262 package (also known as D2PAK) has three pins:
1. Gate (G): This is the control pin. A voltage applied between the Gate and Source terminals activates the MOSFET.
2. Drain (D): This is the output pin connected to the load. The large tab of the package is electrically connected to the Drain pin, which is crucial for heat dissipation.
3. Source (S): This is the common return path, typically connected to ground.
Application Circuit Example: A Simple Switch
A fundamental application for this MOSFET is as a low-side switch. In this configuration:
The load (e.g., a motor, lamp, or relay) is connected between the positive supply voltage (Vdd) and the Drain (D) pin.
The Source (S) pin is connected directly to ground.
A gate driver or microcontroller output pin is connected to the Gate (G) pin through a small series resistor (e.g., 10-100Ω) to dampen any ringing.
A pull-down resistor (e.g., 10kΩ) is often used between the Gate and Source to ensure the MOSFET remains off when the control signal is undefined or high-impedance.
When the microcontroller output applies a voltage above the device's gate threshold voltage (typically 2-4V), the MOSFET turns on, allowing current to flow from Drain to Source, thus powering the load. The low Rds(on) ensures minimal voltage drop across the MOSFET when it is on.
Design Considerations
1. Gate Driving: While the IRLZ24N can be driven directly by 5V logic in many cases, for the absolute lowest Rds(on) and fastest switching, a gate drive voltage of 10V is recommended.
2. Heat Sinking: For applications involving high continuous current, the Drain tab must be soldered to a sufficient PCB copper area or attached to a heatsink to manage thermal dissipation.
3. Protection: A flyback diode is essential when driving inductive loads (like motors or solenoids) to protect the MOSFET from voltage spikes caused by collapsing magnetic fields.
ICGOOODFIND
The Infineon IRLZ24NSTRLPBF stands out as a robust and highly efficient solution for power switching. Its optimal balance of low on-resistance, fast switching capability, and avalanche energy robustness makes it an excellent choice for designers working on DC-DC converters, motor controllers, power supplies, and other applications demanding reliable performance and thermal stability.
Keywords: Power MOSFET, HEXFET Technology, Low On-Resistance, Switching Application, Avalanche Ruggedness
