Infineon IRF100B201: High-Performance Power MOSFET for Automotive and Industrial Applications
The relentless drive for higher efficiency, robustness, and miniaturization in power electronics places immense demands on semiconductor switching devices. Addressing these challenges head-on, the Infineon IRF100B201 stands out as a benchmark N-channel power MOSFET engineered to excel in the most demanding environments. This device encapsulates a perfect blend of ultra-low on-state resistance (RDS(on)) and exceptional switching performance, making it an indispensable component for designers in the automotive and industrial sectors.
A cornerstone of the IRF100B201's appeal is its remarkably low RDS(on) of just 1.6 mΩ (max. at VGS = 10 V). This critical parameter is instrumental in minimizing conduction losses during operation. When a MOSFET is in its on-state, the primary source of power dissipation is the voltage drop across its drain-source channel, calculated as I² RDS(on). By reducing this resistance to an absolute minimum, the IRF100B201 ensures that more power is delivered to the load and less is wasted as heat. This inherent efficiency is paramount for applications like electric power steering (EPS) and braking systems, where energy conservation and thermal management are critical for reliability and performance.
Furthermore, the device is optimized for fast switching, which is crucial for high-frequency circuits found in modern switch-mode power supplies (SMPS) and DC-DC converters. Reduced switching losses allow systems to operate at higher frequencies, leading to the use of smaller passive components like inductors and capacitors. This facilitates a significant reduction in the overall system size and weight—a key advantage in space-constrained automotive and industrial designs. The MOSFET's robust design ensures it can handle the associated voltage and current spikes during these rapid transitions.
The IRF100B201 is rated for a continuous drain current (ID) of 240A and can withstand pulse currents far exceeding this, providing a substantial margin for handling overload conditions. Its 100V drain-source voltage (VDS) rating makes it suitable for 48V automotive systems and various industrial power buses. Packaged in the robust TO-263, the device offers an excellent power-to-size ratio and superior thermal characteristics, allowing heat to be efficiently transferred away from the silicon die to the PCB or an external heatsink.
Infineon has built this MOSFET with the stringent requirements of the AEC-Q101 qualification in mind, ensuring it meets the rigorous quality and reliability standards for automotive applications. This makes it a trusted choice for mission-critical systems such as engine management, transmission control, and high-current motor drives. In the industrial realm, its robustness is equally valued in power tools, industrial automation, and solar inverters.
ICGOODFIND: The Infineon IRF100B201 is a superior power MOSFET that sets a high standard for performance and reliability. Its industry-leading low RDS(on) and high current capability directly translate into enhanced system efficiency and power density. For engineers designing next-generation automotive and industrial power systems, this component represents a optimal solution for achieving higher performance without compromising on durability or thermal management.
Keywords: Power MOSFET, Ultra-low RDS(on), Automotive Applications, High Current Capability, AEC-Q101 Qualified.
